AMS400GAS12 features ? v - igbt = 6 . g e n e r a t ion t r e nch v - igbt ? i n c r e ased po we r c yc lin g c a pabilit y ? w ith int e gr at ed g a t e resistor ? l ow switc h ing losses a t high d i/dt typ ical app lications ? ac i n ve rte r d rive s ? up s ? e le ct ronic we lde rs ? s wit c h e d r elu c t a n c e m o t o r rem ark s ? case te mpe ratu re lim ite d to t c = 1 2 5 c max, r e c omm. t o p = -40 . . . +150 c, produ c t r e l. r es u lts v alid f o r t j = 150 absol ute maximum r atin g s s y m bol con d i t i ons values unit igbt v c e s t j = 2 5 c 1200 v i c t j = 175 c t c = 2 5 c 6 1 2 a t c = 8 0 c 4 6 7 a i c n o m 4 0 0 a i c r m i c r m = 3xi c n o m 1200 a v ges -20 . . . 2 0 v t psc v c c = 720 v v g e 1 5 v v c e s 1 200 v t j = 1 2 5 c 1 0 s t j -40 . . . 175 c inv erse d iod e i f t j = 175 c t c = 2 5 c 4 4 0 a t c = 8 0 c 3 2 9 a i fno m 4 0 0 a i f r m i f r m = 3 x i fno m 1200 a i fsm t p = 1 0 ms , s i n 1 8 0 , t j = 2 5 c 1980 a t j -40 . . . 175 c mod u l e i t(rm s ) t t e r m i n a l = 8 0 c 5 0 0 a t s t g -40 . . . 125 c v i s o l v 0 0 0 4 n i m 1 = t , z h 0 5 s u n i s c a c h a r a c t er i s tics s y m bol con d i t i ons min . typ. max. unit igbt v c e (sat ) i c = 4 0 0 a v g e = 1 5 v chip l e vel t j = 2 5 c 1 . 7 5 2.2 0 v t j = 1 5 0 c 2 . 2 0 2.5 0 v v c e 0 chip l e vel t j = 2 5 c 0 . 9 4 1.0 4 v t j = 1 5 0 c 0 . 8 8 0.9 8 v r c e v g e = 1 5 v chip l e vel t j = 2 5 c 2 . 0 2 2.9 0 m t j = 1 5 0 c 3 . 3 0 3.8 0 m v ge(t h ) v g e = v c e , i c v 5 . 6 6 5 . 5 a m 6 1 = i ces v g e = 0 v v c e = 1200 v t j = 2 5 c 0.1 0 . 3 m a t j = 1 5 0 c ma c ies v c e = 2 5 v v g e = 0 v f=1mhz 2 4 . 0 4 n f c o e s f=1mhz 2 . 3 6 n f c r e s f=1mhz 2 . 3 5 6 n f q g v g e = - 8 v . . . + 1 5 v 4420 n c r g i n t 1 . 8 8 t d (o n ) v c c = 600 v i c = 4 0 0 a v g e = 1 5 v r g o n = 3 r g o = 3 d i / d t o n = 9 800 a / s d i / d t o = 5 0 0 0 a / s du/ d t o = 7600 v / s t j = 1 5 0 c 3 5 0 n s t r t j = 1 5 0 c 6 0 n s e o n t j = 1 5 0 c 3 9 m j t d (o ) t j = 1 5 0 c 7 0 0 n s t f t j = 1 5 0 c 6 5 n s e o t j = 1 5 0 c 4 2 m j r t h (j-c) w / k 2 7 0 . 0 t b g i r e p 133 kings road, madsion, new jersey 07940 http://www.americanmicrosemi.com
n o r k i m e s y b ? 2 1 0 2 . 8 0 . 5 1 ? 4 . v e r 2 c h a r a c t er i s tics s y m bol con d i t i ons min . typ. max. unit inv erse d iod e v f = v e c i f = 400 a v g e = 0 v chip l e vel t j = 2 5 c 2 . 2 0 2.5 2 v t j = 1 5 0 c 2 . 1 5 2.4 7 v v f 0 chip l e vel t j = 2 5 c 1 . 3 1 . 5 v t j = 1 5 0 c 0 . 9 1 . 1 v r f chip l e vel t j = 2 5 c 2 . 3 2 . 5 m t j = 1 5 0 c 3 . 1 3 . 4 m i r r m i f = 400 a d i / d t o = 9 5 0 0 a / s v g e = 1 5 v v c c = 600 v t j = 1 5 0 c 4 5 0 a q r r t j = 1 5 0 c 5 8 c e r r t j = 1 5 0 c 2 6 m j r t h (j-c) w / k 4 1 . 0 e d o i d r e p mod u l e l c e 1 5 2 0 n h r c c '+e e ' t e rm in a l-c h ip t c = 2 5 c 0 . 1 8 m t c = 1 2 5 c 0 . 2 2 m r t h (c -s ) w / k 8 3 0 . 0 2 0 . 0 e l u d o m r e p m s m n 5 3 6 m k n i s t a e h o t m t t o t e rm in a ls m6 2 . 5 5 n m m4 1 . 1 2 n m w 330 g g as configuration AMS400GAS12 features ? v - igbt = 6 . g e n e r a t ion t r e nch v - igbt ? i sola ted c opper b a seplate u s ing dbc te ch nology (di rec t coppe r bonding ) ? i n c r e ased po we r c yc lin g c a pabilit y ? w ith int e gr at ed g a t e resistor ? l ow switc h ing losses a t high d i/dt typ ical app lications ? ac i n ve rte r d rive s ? up s ? e le ct ronic we lde rs ? s wit c h e d r elu c t a n c e m o t o r rem ark s ? case te mpe ratu re lim ite d to t c = 1 2 5 c max, r e c omm. t o p = -40 . . . +150 c, produ c t r e l. r es u lts v alid f o r t j = 150 133 king road, madison, new jersey 07940 usa http://www.americanmicrosemi.com
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